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BLP8G21S-160PV Datasheet(PDF) 1 Page - NXP Semiconductors |
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BLP8G21S-160PV Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 11 page 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz. 1.2 Features and benefits Designed for broadband operation (1880 MHz to 2025 MHz) Decoupling leads to enable improved video bandwidth Excellent ruggedness High efficiency Excellent thermal stability Internally matched for ease of use High power gain Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to 2025 MHz frequency range BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1880 to 1920 600 28 20 17.5 31 30 [1] |
Similar Part No. - BLP8G21S-160PV_15 |
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Similar Description - BLP8G21S-160PV_15 |
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