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MAX5918LEEE Datasheet(PDF) 11 Page - Maxim Integrated Products

Part # MAX5918LEEE
Description  Low-Voltage, Dual Hot-Swap Controllers with Independent ON/OFF Control
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Manufacturer  MAXIM [Maxim Integrated Products]
Direct Link  https://www.maximintegrated.com/en.html
Logo MAXIM - Maxim Integrated Products

MAX5918LEEE Datasheet(HTML) 11 Page - Maxim Integrated Products

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tems to be customized for MOSFET gate capacitance
and board capacitance (CBOARD). The startup period is
adjusted with the resistance connected from TIM to GND
(RTIM). RTIM must be between 4k
Ω and 500kΩ. The
startup period has a default value of 9ms when TIM is left
floating. Calculate RTIM with the following equation:
where tSTART is the desired startup period.
Startup Sequence
There are two ways of completing the startup sequence.
Case A describes a startup sequence that slowly turns
on the MOSFETs by limiting the gate charge. Case B
uses the current-limiting feature and turns on the
MOSFETs as fast as possible while still preventing a high
inrush current. The output voltage ramp-up time (tON) is
determined by the longer of the two timings, case A and
case B. Set the startup timer tSTART to be longer than tON
to guarantee enough time for the output voltage to settle.
Case A: Slow Turn-On (without current limit)
There are two ways to turn on the MOSFETs without
reaching the fast-comparator current limit:
• If the board capacitance (CBOARD) is small, the
inrush current is low.
• If the gate capacitance is high, the MOSFETs turn
on slowly.
In both cases, the turn-on time is determined only by the
charge required to enhance the MOSFET. The small
gate-charging current of 100µA effectively limits the out-
put voltage dV/dt. Connecting an external capacitor
between GATE and GND extends turn-on time. The time
required to charge/discharge a MOSFET is as follows:
where:
CGATE is the external gate to ground capacitance
(Figure 4).
∆VGATE is the change in gate voltage.
QGATE is the MOSFET total gate charge.
IGATE is the gate-charging/discharging current.
In this case, the inrush current depends on the MOSFET
gate-to-drain capacitance (Crss) plus any additional
capacitance from GATE to GND (CGATE), and on any
load current (ILOAD) present during the startup period.
Example: Charging and Discharging times using the
Fairchild FDB7030L MOSFET
If VIN1 = 5V then GATE1 charges up to 10.4V (VIN1 +
VDRIVE), therefore
∆VGATE = 10.4V. The manufacturer’s
data sheet specifies that the FDB7030L has approxi-
mately 60nC of gate charge and Crss = 600pF. The
MAX5918/MAX5919 have a 100µA gate-charging cur-
rent and a 3mA strong discharging current.
I
C
CC
II
INRUSH
BOARD
rss
GATE
GATE
LOAD
=
+
×+
t
CV
Q
I
GATE
GATE
GATE
GATE
=
×∆
+
R
t
pF
TIM
START
=
×
128 800
Low-Voltage, Dual Hot-Swap Controllers with
Independent ON/OFF Control
______________________________________________________________________________________
11
COMPONENT
MANUFACTURER
PHONE
WEBSITE
Dale-Vishay
402-564-3131
www.vishay.com
Sense Resistors
IRC
704-264-8861
www.irctt.com
Fairchild
888-522-5372
www.fairchildsemi.com
International Rectifier
310-233-3331
www.irf.com
MOSFETs
Motorola
602-244-3576
www.mot-sps.com/ppd
Table 3. Component Manufacturers
GATE
SENSE
GND
ON_
RSENSE
VOUT
CGATE
CBOARD
VIN
IN_
RPULLUP
PGOOD_
MAX5918
MAX5919
Figure 4. Operating with an External Gate Capacitor


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