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MAX5918LEEE Datasheet(PDF) 11 Page - Maxim Integrated Products |
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MAX5918LEEE Datasheet(HTML) 11 Page - Maxim Integrated Products |
11 / 15 page tems to be customized for MOSFET gate capacitance and board capacitance (CBOARD). The startup period is adjusted with the resistance connected from TIM to GND (RTIM). RTIM must be between 4k Ω and 500kΩ. The startup period has a default value of 9ms when TIM is left floating. Calculate RTIM with the following equation: where tSTART is the desired startup period. Startup Sequence There are two ways of completing the startup sequence. Case A describes a startup sequence that slowly turns on the MOSFETs by limiting the gate charge. Case B uses the current-limiting feature and turns on the MOSFETs as fast as possible while still preventing a high inrush current. The output voltage ramp-up time (tON) is determined by the longer of the two timings, case A and case B. Set the startup timer tSTART to be longer than tON to guarantee enough time for the output voltage to settle. Case A: Slow Turn-On (without current limit) There are two ways to turn on the MOSFETs without reaching the fast-comparator current limit: • If the board capacitance (CBOARD) is small, the inrush current is low. • If the gate capacitance is high, the MOSFETs turn on slowly. In both cases, the turn-on time is determined only by the charge required to enhance the MOSFET. The small gate-charging current of 100µA effectively limits the out- put voltage dV/dt. Connecting an external capacitor between GATE and GND extends turn-on time. The time required to charge/discharge a MOSFET is as follows: where: CGATE is the external gate to ground capacitance (Figure 4). ∆VGATE is the change in gate voltage. QGATE is the MOSFET total gate charge. IGATE is the gate-charging/discharging current. In this case, the inrush current depends on the MOSFET gate-to-drain capacitance (Crss) plus any additional capacitance from GATE to GND (CGATE), and on any load current (ILOAD) present during the startup period. Example: Charging and Discharging times using the Fairchild FDB7030L MOSFET If VIN1 = 5V then GATE1 charges up to 10.4V (VIN1 + VDRIVE), therefore ∆VGATE = 10.4V. The manufacturer’s data sheet specifies that the FDB7030L has approxi- mately 60nC of gate charge and Crss = 600pF. The MAX5918/MAX5919 have a 100µA gate-charging cur- rent and a 3mA strong discharging current. I C CC II INRUSH BOARD rss GATE GATE LOAD = + ×+ t CV Q I GATE GATE GATE GATE = ×∆ + R t pF TIM START = × 128 800 Low-Voltage, Dual Hot-Swap Controllers with Independent ON/OFF Control ______________________________________________________________________________________ 11 COMPONENT MANUFACTURER PHONE WEBSITE Dale-Vishay 402-564-3131 www.vishay.com Sense Resistors IRC 704-264-8861 www.irctt.com Fairchild 888-522-5372 www.fairchildsemi.com International Rectifier 310-233-3331 www.irf.com MOSFETs Motorola 602-244-3576 www.mot-sps.com/ppd Table 3. Component Manufacturers GATE SENSE GND ON_ RSENSE VOUT CGATE CBOARD VIN IN_ RPULLUP PGOOD_ MAX5918 MAX5919 Figure 4. Operating with an External Gate Capacitor |
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