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L4075G-AF5-R Datasheet(PDF) 4 Page - Unisonic Technologies |
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L4075G-AF5-R Datasheet(HTML) 4 Page - Unisonic Technologies |
4 / 5 page L4075 Preliminary CMOS IC UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R125-030.a ELECTRICAL CHARACTERISTICS (VIN=12V, TAMB=25°C unless otherwise stated) (Note 1) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input Voltage VIN 6 40 V Quiescent Supply Current with Output Off IINQOFF ADJ Pin Grounded 40 60 80 μA Quiescent Supply Current with Output Switching IINQON ADJ Pin Floating 450 600 μA Mean Current Sense Threshold Voltage VSENSE 113 mV Sense Threshold Hysteresis VSENSEHYS ±15 % ISENSE Pin Input Current ISENSE VSENSE=0.1V 8 10 μA Internal Reference Voltage VREF Measured on ADJ Pin with Pin Floating 1.2 V External Control Voltage Range On ADJ Pin for DC Brightness Control VADJ 0.3 1.2 V DC Voltage On ADJ Pin to Switch Chip from Active (On) State to Quiescent (Off) State VADJOFF VADJ Falling 0.15 0.2 0.25 V DC Voltage On ADJ Pin to Switch Chip from Quiescent (Off) State to Active (On) State VADJON VADJ Rising 0.2 0.25 0.3 V Resistance Between ADJ Pin and VREF RADJ 500 KΩ Continuous LX Switch Current ILXmean 0.35 A LX Switch Leakage Current ILX(leak) 1 μA LX Switch “On” Resistance RLX 0.9 1.5 Ω Minimum Switch “ON” Time TONMIN LX Switch “ON” 200 ns Minimum Switch “OFF” Time TOFFMIN LX Switch “OFF” 200 ns Brightness Control Range at Low Frequency PWM Signal DPWM(LF) PWM Frequency=100Hz, PWM Amplitude=5V, VIN=15V, Driving 1LED, L=27μH 1200:1 Brightness Control Range at Low Frequency PWM Signal DPWM(HF) PWM Frequency=10KHz, PWM Amplitude=5V, VIN=15V, Driving 1LED, L=27μH 13:1 Operating Frequency fLX ADJ Pin Floating L=100Μh (0.82Ω) IOUT=350mA @ VLED=3.4V Driving 1 LED 154 KHz Recommended Maximum Operating Frequency fLXMAX 1 MHz Recommended Duty Cycle Range of Output Switch at fLXmax DLX 0.3 0.7 0.9 Internal Comparator Propagation Delay TPD 50 ns Thermal Shutdown Temperature TSD 140 °C Thermal Shutdown Hysteresis TSD-HYS 20 °C Note: Production testing of the chip is performed at 25°C. Functional operation of the chip and parameters specified are guaranteed by design, characterization and process control in other temperature. |
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