BLM7G1822S-20PB_S-20PBG

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© NXP Semiconductors N.V. 2015. All rights reserved.

Product data sheet

Rev. 3 — 1 July 2015

5 of 18

NXP Semiconductors

BLM7G1822S-20PB(G)

LDMOS 2-stage power MMIC

[1]

3GPP test model 1; 64 DPCH; PAR = 9.9 dB at 0.01% probability on CCDF.

[2]

f = 2170 MHz.

8.

Application information

[1]

Table 7.

RF Characteristics

specified, measured in a NXP wideband f = 1807.5 MHz to 2167.5 MHz straight lead production circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Test signal: single carrier W-CDMA [1]

power gain

f = 1807.5 MHz

-

34

-

dB

f = 2167.5 MHz

30.8

32.3

33.8

dB



D

drain efficiency

f = 1807.5 MHz

-

22

-

%

f = 2167.5 MHz

20

23

-

%

input return loss

f = 2167.5 MHz

-

19

10

dB

adjacent channel power ratio (5 MHz)

f = 1807.5 MHz

-

41

-

dBc

f = 2167.5 MHz

-

41

37

dBc

output peak-to-average ratio

f = 1807.5 MHz

-

8.4

-

dB

f = 2167.5 MHz

7.2

8.4

-

dB

I

quiescent drain current variation with

temperature

T =

40 C to +85 C

gate feed resistor = 1105



-

1-

%

gate feed resistor = 765



-

1-

%

Test signal: CW [2]



s21

phase response difference

between sections

10

-

+10

deg

s

2

insertion power gain difference

between sections

0.5 -

+0.5

dB

Table 8.

Typical performance

sections) unless otherwise specified, measured in a NXP f = 2110 MHz to 2170 MHz straight lead class AB application circuit

(see Figure 3 for the component layout and Figure 4 for the electrical schematic).

Symbol

Parameter

Conditions

Min Typ

Max

Unit

output power at 1 dB gain compression

f = 2140 MHz

-

43.5

-

W

output power at 3 dB gain compression

f = 2140 MHz

-

44.1

-

W



D

drain efficiency

-

47.6

-

%

power gain

-

31.5

-

dB

video bandwidth

f = 2140 MHz

-170

-

MHz

gain flatness

over a frequency range of 60 MHz;

-0.4

-

dB

G/T

gain variation with temperature

f = 2140 MHz

-

0.03

-

dB/

C

s

2

isolation

between sections A and B;

[1]

-28.5

-

dB

K

Rollett stability factor

T =

40 C; f = 0.1 GHz to 3 GHz

-

>1

-