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BLM7G1822S-40PB Datasheet(PDF) 11 Page - NXP Semiconductors

Part # BLM7G1822S-40PB
Description  LDMOS 2-stage power MMIC
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLM7G1822S-40PB Datasheet(HTML) 11 Page - NXP Semiconductors

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BLM7G1822S-40PB_S-40PBG
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 July 2015
11 of 18
NXP Semiconductors
BLM7G1822S-40PB(G)
LDMOS 2-stage power MMIC
8.4 Graphs
Tcase = 25 C; VDS =28V; IDq1 =40mA; IDq2 = 120 mA;
PL = 4 W. Per section.
(1) magnitude of Gp
(2) magnitude of RLin
Tcase = 25 C; VDS =28V; IDq1 =40mA; IDq2 =120 mA;
PL = 4 W. Per section.
(1) magnitude of Gp
(2) magnitude of RLin
Fig 9.
Wideband power gain and input return loss as
function of frequency; typical values
Fig 10. In-band power gain and input return loss as
function of frequency; typical values
Tcase = 25 C; VDS =28V; IDq1 =40mA; IDq2 = 120 mA.
Per section.
(1) f = 1805 MHz
(2) f = 1960 MHz
(3) f = 2170 MHz
Tcase = 25 C; VDS =28V; IDq1 =40mA; IDq2 =120 mA.
Per section.
(1) f = 1805 MHz
(2) f = 1960 MHz
(3) f = 2170 MHz
Fig 11. Power gain and drain efficiency as function of
output power; typical values
Fig 12. 27 dBm normalized phase response as a
function of output power; typical values


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