BLM8G0710S-45AB_S-45ABG

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Objective data sheet

Rev. 1 — 20 August 2015

3 of 20

NXP Semiconductors

BLM8G0710S-45AB(G)

LDMOS 2-stage power MMIC

3.

Ordering information

4.

Block diagram

5.

Limiting values

[1]

Continuous use at maximum temperature will affect the reliability. For details refer to the online MTF calculator.

15

RF output peaking section (B) / drain-source voltage of peaking section, final stage (B2)

16

RF output carrier section (A) / drain-source voltage of carrier section, final stage (A2)

GND

flange RF ground

Table 2.

Symbol

Pin

Description

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLM8G0710S-45AB

HSOP16F

plastic, heatsink small outline package; 16 leads(flat)

SOT1211-2

BLM8G0710S-45ABG

HSOP16

plastic, heatsink small outline package; 16 leads

SOT1212-2

Fig 2.

Block diagram

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+13

V

storage temperature

65

+150

C

junction temperature

[1] -

225

C

case temperature

-

150

C