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BLP7G22-10 Datasheet(PDF) 7 Page - NXP Semiconductors

Part # BLP7G22-10
Description  LDMOS driver transistor
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLP7G22-10 Datasheet(HTML) 7 Page - NXP Semiconductors

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BLP7G22-10
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 2 — 30 May 2013
7 of 16
NXP Semiconductors
BLP7G22-10
LDMOS driver transistor
8.1.2.2
2-Carrier W-CDMA
VDS =28V; IDq =110 mA; Tcase = 25 C;
carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) Gp at f = 2110 MHz
(2) Gp at f = 2140 MHz
(3) Gp at f = 2170 MHz
(4)
D at f = 2110 MHz
(5)
D at f = 2140 MHz
(6)
D at f = 2170 MHz
VDS =28V; IDq =110 mA; Tcase = 25 C;
carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at
0.01 % probability on CCDF.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 6.
Power gain and drain efficiency as function of
load power; typical values
Fig 7.
Adjacent channel power ratio (5 MHz) as a
function of load power; typical values


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