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BLP7G22-10 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BLP7G22-10 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 16 page BLP7G22-10 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 2 — 30 May 2013 7 of 16 NXP Semiconductors BLP7G22-10 LDMOS driver transistor 8.1.2.2 2-Carrier W-CDMA VDS =28V; IDq =110 mA; Tcase = 25 C; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at 0.01 % probability on CCDF. (1) Gp at f = 2110 MHz (2) Gp at f = 2140 MHz (3) Gp at f = 2170 MHz (4) D at f = 2110 MHz (5) D at f = 2140 MHz (6) D at f = 2170 MHz VDS =28V; IDq =110 mA; Tcase = 25 C; carrier spacing = 5 MHz; 46 % clipping; PAR = 8.4 dB at 0.01 % probability on CCDF. (1) f = 2110 MHz (2) f = 2140 MHz (3) f = 2170 MHz Fig 6. Power gain and drain efficiency as function of load power; typical values Fig 7. Adjacent channel power ratio (5 MHz) as a function of load power; typical values |
Similar Part No. - BLP7G22-10_15 |
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Similar Description - BLP7G22-10_15 |
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