NXP Semiconductors

BSH205G2

20 V, P-channel Trench MOSFET

BSH205G2

All information provided in this document is subject to legal disclaimers.

© NXP Semiconductors N.V. 2015. All rights reserved

Product data sheet

29 April 2015

8 / 16

0

-4

-3

-1

-2

aaa-016183

-4

-2

-6

-8

(A)

0

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

-60

180

120

0

60

aaa-016184

1.0

0.5

1.5

2.0

a

0

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

-60

180

120

0

60

aaa-016185

-0.4

-0.8

-1.2

(V)

0

min

typ

max

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

aaa-016186

-10

-1

C

(pF)

10

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values