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BSH205G2 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BSH205G2 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 16 page NXP Semiconductors BSH205G2 20 V, P-channel Trench MOSFET BSH205G2 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 29 April 2015 8 / 16 VGS (V) 0 -4 -3 -1 -2 aaa-016183 -4 -2 -6 -8 ID (A) 0 Tj = 150 °C Tj = 25 °C VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values Tj (°C) -60 180 120 0 60 aaa-016184 1.0 0.5 1.5 2.0 a 0 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values Tj (°C) -60 180 120 0 60 aaa-016185 -0.4 -0.8 -1.2 VGS(th) (V) 0 min typ max ID = -0.25 mA; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature aaa-016186 VDS (V) -10-1 -102 -10 -1 102 103 C (pF) 10 Ciss Coss Crss f = 1 MHz; VGS = 0 V Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values |
Similar Part No. - BSH205G2_15 |
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Similar Description - BSH205G2_15 |
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