BUK6E4R0-75C

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Product data sheet

Rev. 02 — 30 August 2010

4 of 14

NXP Semiconductors

BUK6E4R0-75C

N-channel TrenchMOS FET

Fig 1.

Continuous drain current as a function of

mounting base temperature

Fig 2.

Normalized total power dissipation as a

function of mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aae374

0

50

100

150

200

0

50

100

150

200

(A)

(1)

0

200

150

50

100

03aa16

40

80

120

(%)

0

003aae376

10

-1

1

10

10

2

10

3

10

-1

1

10

10

2

10

3

(A)

DC

100 ms

10 ms

1 ms

100

μs