Electronic Components Datasheet Search |
|
BUK7E4R6-60E Datasheet(PDF) 3 Page - NXP Semiconductors |
|
BUK7E4R6-60E Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page NXP Semiconductors BUK7E4R6-60E N-channel TrenchMOS standard level FET BUK7E4R6-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 11 September 2012 3 / 12 Symbol Parameter Conditions Min Max Unit Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 100 A; Vsup ≤ 60 V; RGS = 50 Ω; VGS = 60 V; Tj(init) = 25 °C; unclamped; Fig. 3 [2][3] - 273 mJ [1] Continuous current is limited by package. [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [3] Refer to application note AN10273 for further information. 003aah495 0 50 100 150 200 0 50 100 150 200 Tmb(°C) ID (A) (1) (1) Capped at 100A due to package Fig. 1. Continuous drain current as a function of mounting base temperature Tmb (°C) 0 200 150 50 100 03aa16 40 80 120 Pder (%) 0 Fig. 2. Normalized total power dissipation as a function of mounting base temperature 003aah496 10-1 1 10 102 103 10-3 10-2 10-1 1 10 tAL(ms) IAL (A) (1) (2) (3) Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time |
Similar Part No. - BUK7E4R6-60E_15 |
|
Similar Description - BUK7E4R6-60E_15 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |