NXP Semiconductors

BUK7K25-40E

Dual N-channel TrenchMOS standard level FET

BUK7K25-40E

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Product data sheet

23 April 2013

8 / 13

003aaj758

0

25

50

75

100

125

150

0

10

20

30

(mΩ)

6.5

5

10

5.5

6

Fig. 12. Drain-source on-state resistance as a function

of drain current; typical values

003aaj813

0

0.4

0.8

1.2

1.6

2

-60

0

60

120

180

a

Fig. 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaa508

Fig. 14. Gate charge waveform definitions

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0

2

4

6

8

10

0

2

4

6

8

10

(V)

14 V

32 V

Fig. 15. Gate-source voltage as a function of gate

charge; typical values