NXP Semiconductors

BUK7K35-60E

Dual N-channel 60 V, 30 mΩ standard level MOSFET

BUK7K35-60E

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Product data sheet

15 November 2013

7 / 13

003aak256

0

1

2

3

4

5

6

7

8

0

8

16

24

32

40

(A)

(A)

175°C

175°C

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah028

0

2

4

6

(A)

max

typ

min

Fig. 9. Sub-threshold drain current as a function of

gate-source voltage

003aah027

0

1

2

3

4

5

-60

0

60

120

180

(V)

max

typ

min

Fig. 10. Gate-source threshold voltage as a function of

junction temperature

003aak263

0

4

8

12

16

20

0

20

40

60

80

100

120

5 V

5 V

5.5 V

5.5 V

6 V

6 V

7 V

7 V

10 V

10 V

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values