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BUK7Y3R5-40E Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7Y3R5-40E Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors BUK7Y3R5-40E N-channel 40 V, 3.5 mΩ standard level MOSFET in LFPAK56 BUK7Y3R5-40E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 19 June 2015 7 / 13 003aag960 0 1 2 3 4 5 6 7 8 0 36 72 108 144 180 VGS (V) ID ID (A) (A) Tj = 25°C Tj = 25°C 175°C 175°C Fig. 8. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aah027 0 1 2 3 4 5 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 9. Gate-source threshold voltage as a function of junction temperature 003aah028 10-6 10-5 10-4 10-3 10-2 10-1 0 2 4 6 VGS(V) ID (A) max typ min Fig. 10. Sub-threshold drain current as a function of gate-source voltage 003aag970 0 2 4 6 8 10 0 50 100 150 ID(A) RDSon (mΩ) VGS(V) = 10 5 6 6.5 7 8 Tj = 25 °C; tp = 300 µs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values |
Similar Part No. - BUK7Y3R5-40E_15 |
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Similar Description - BUK7Y3R5-40E_15 |
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