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BUK7Y4R8-60E Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK7Y4R8-60E Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page NXP Semiconductors BUK7Y4R8-60E N-channel 60 V, 4.8 mΩ standard level MOSFET in LFPAK56 BUK7Y4R8-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 7 May 2013 6 / 13 Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 4140 5520 pF Coss output capacitance - 499 599 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 15 - 308 422 pF td(on) turn-on delay time - 15 - ns tr rise time - 27 - ns td(off) turn-off delay time - 57 - ns tf fall time VDS = 45 V; RL = 1.8 Ω; VGS = 10 V; RG(ext) = 5 Ω; Tj = 25 °C - 31 - ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.81 1.2 V trr reverse recovery time - 33 - ns Qr recovered charge IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C - 38.9 - nC 003aai644 0 25 50 75 100 0 1 2 VDS(V) ID (A) VGS (V) = 4 4.5 5 6 10 5.5 Tj = 25 °C; tp = 300 μs Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values 003aai645 0 2.5 5 7.5 10 0 5 10 15 20 VGS(V) RDSon (mΩ) Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values |
Similar Part No. - BUK7Y4R8-60E_15 |
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Similar Description - BUK7Y4R8-60E_15 |
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