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IRSM836-025MA Datasheet(PDF) 4 Page - International Rectifier |
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IRSM836-025MA Datasheet(HTML) 4 Page - International Rectifier |
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4 / 19 page  IRSM836-025MA 4 www.irf.com © 2013 International Rectifier February 3, 2013 VIT, HYS ITRIP Input Hysteresis --- 0.06 --- V RBR Internal Bootstrap Equivalent Resistor Value --- 200 --- Ω TJ=25°C VRCIN,TH RCIN Positive Going Threshold --- 8 --- V RON,FAULT FAULT Open-Drain Resistance --- 50 100 Ω Note 4: Characterized, not tested at manufacturing Dynamic Electrical Characteristics (VCC-COM) = (VB-VS) = 15 V. TA = 25 oC unless otherwise specified. Symbol Description Min Typ Max Units Conditions TON Input to Output Propagation Turn-On Delay Time --- 1 1.5 µs ID=1mA, V +=50V See Fig.2 TOFF Input to Output Propagation Turn-Off Delay Time --- 1 1.5 µs TFIL,IN Input Filter Time (HIN, LIN) 200 330 --- ns VIN=0 & VIN=4V TFIL,EN Input Filter Time (EN) 100 200 --- ns VIN=0 & VIN=4V TBLT-ITRIP ITRIP Blanking Time 100 330 ns VIN=0 & VIN=4V, VI/Trip=5V TFAULT Itrip to Fault --- 590 950 ns VIN=0 & VIN=4V TEN EN Falling to Switch Turn-Off 750 950 ns VIN=0 & VIN=4V TITRIP ITRIP to Switch Turn-Off Propagation Delay --- 950 1200 ns ID=1A, V +=50V, See Figure 3 MOSFET Avalanche Characteristics Symbol Description Min Typ Max Units Conditions EAS Single Pulse Avalanche Energy --- 62 --- mJ TJ=25°C, L=18mH, VDD=75V, IAS=2.6A, SO-8 package Thermal and Mechanical Characteristics Symbol Description Min Typ Max Units Conditions Rth(J-CT) Total Thermal Resistance Junction to Case Top --- 28.2 --- °C/W One device Rth(J-CB) Total Thermal Resistance Junction to Case Bottom --- 2.5 --- °C/W One device |
Similar Part No. - IRSM836-025MA_15 |
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Similar Description - IRSM836-025MA_15 |
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