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BUK7Y07-30B Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7Y07-30B Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page BUK7Y07-30B All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 — 7 April 2010 3 of 14 NXP Semiconductors BUK7Y07-30B N-channel TrenchMOS standard level FET 4. Limiting values [1] Continuous current is limited by package. [2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [3] Repetitive avalanche rating limited by an average junction temperature of 170 °C. [4] Refer to application note AN10273 for further information. [5] Maximum value not quoted. Repetitive rating defined in avalanche rating figure. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C --30 V VDGR drain-gate voltage RGS =20kΩ --30 V VGS gate-source voltage -20 - 20 V ID drain current Tmb =25°C; VGS =10V; see Figure 1; see Figure 4 [1] --75 A Tmb =100 °C; VGS = 10 V; see Figure 1 --63 A IDM peak drain current Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 4 - - 356 A Ptot total power dissipation Tmb =25°C; see Figure 2 - - 105 W Tstg storage temperature -55 - 175 °C Tj junction temperature -55 - 175 °C Source-drain diode IS source current Tmb =25°C [1] --75 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - - 356 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =75A; Vsup ≤ 30 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped - - 198 mJ EDS(AL)R repetitive drain-source avalanche energy see Figure 3 [2][3][4] [5] ---J |
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