BUK7Y08-40B

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Product data sheet

Rev. 03 — 7 April 2010

9 of 14

NXP Semiconductors

BUK7Y08-40B

N-channel TrenchMOS standard level FET

Fig 14. Gate-source voltage as a function of gate

charge; typical values.

Fig 15. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.

003aad503

0

2

4

6

8

10

0

1020

3040

(V)

VDS =14 V

VDS =32 V

003aad504

10

2

10

3

10

4

10

-1

1

10

10

2

C

(pF)

003aad502

0

20

40

60

80

0.2

0.4

0.6

0.8

1

(A)

°C

175

°C