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BUK7Y19-100E Datasheet(PDF) 6 Page - NXP Semiconductors |
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BUK7Y19-100E Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page NXP Semiconductors BUK7Y19-100E N-channel 100 V, 19 mΩ standard level MOSFET in LFPAK56 BUK7Y19-100E All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 6 November 2013 6 / 13 Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 2593 3457 pF Coss output capacitance - 242 290 pF Crss reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Tj = 25 °C; Fig. 15 - 167 229 pF td(on) turn-on delay time - 9 - ns tr rise time - 17 - ns td(off) turn-off delay time - 45 - ns tf fall time VDS = 80 V; RL = 5 Ω; VGS = 10 V; RG(ext) = 5 Ω; Tj = 25 °C - 24 - ns Source-drain diode VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.81 1.2 V trr reverse recovery time - 41 - ns Qr recovered charge IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 25 V; Tj = 25 °C - 75 - nC aaa-009119 0 1 2 3 4 0 40 80 120 160 VDS (V) ID ID (A) (A) VGS = 4 V VGS = 4 V 4.5 V 4.5 V 5 V 5 V 5.5 V 5.5 V 6 V 6 V 8 V 8 V 10 V 10 V Tj = 25 °C; tp = 300 μs Fig. 6. Output characteristics; drain current as a function of drain-source voltage; typical values aaa-009120 0 4 8 12 16 20 0 10 20 30 40 50 60 VGS (V) RDSon RDSon (mΩ) (mΩ) Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values |
Similar Part No. - BUK7Y19-100E_15 |
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Similar Description - BUK7Y19-100E_15 |
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