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BUK7E1R9-40E Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK7E1R9-40E Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page NXP Semiconductors BUK7E1R9-40E N-channel TrenchMOS standard level FET BUK7E1R9-40E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 5 September 2012 7 / 12 003aah027 0 1 2 3 4 5 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 10. Gate-source threshold voltage as a function of junction temperature 003aaj657 0 5 10 0 60 120 180 240 ID(A) RDSon (mΩ) VGS(V) = 20 10 5 5.5 6 Tj = 25 °C; tp = 300 μs Fig. 11. Drain-source on-state resistance as a function of drain current; typical values 003aag816 0 0.5 1 1.5 2 -60 0 60 120 180 Tj (°C) a Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 13. Gate charge waveform definitions |
Similar Part No. - BUK7E1R9-40E_15 |
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Similar Description - BUK7E1R9-40E_15 |
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