CHA6250-QFG

Ref. : DSCHA6250-QFG2272 - 28 Sep 12

1/14

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France

Tel

.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34

5.5-9GHz Power Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The

CHA6250-QFG

is

a

three

stages

monolithic GaAs high power circuit that

produces more than 2 Watt output power.

It is designed for commercial communication

systems.

The circuit is manufactured with a pHEMT

process, 0.5µm gate length.

Main Features

Output power at 1dB comp.

■ Broadband performances: 5.5- 9GHz

■ 23.5dB Linear Gain

■ 33.5dBm output power @1dB comp.

■ 43dBm output TOI

■ 29% PAE@ 1dB compression

■ DC bias: Vd=7Volt@Id=0.9A

■ 32L-QFN5x5

Main Electrical Characteristics

Tamb.= +25°C

Symbol

Parameter

Min

Typ

Max

Unit

Freq

Frequency range

5.5

9.0

GHz

Gain

Linear Gain

23.5

dB

OTOI

Output TOI

43.0

dBm

Pout

Output Power @1dB comp.

33.5

dBm

28

29

30

31

32

33

34

35

36

5

5.5

6

6.5

7

7.5

8

8.5

9

9.5

10

Frequency (GHz)

Temp=25°C

Temp=-40°C

Temp=+85°C