NX7002BKXB_15 datasheet(1/17 Pages) PHILIPS

Part #	NX7002BKXB

Description	60 V, dual N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NX7002BKXB

60 V, dual N-channel Trench MOSFET

30 June 2015

Product data sheet

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1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small

DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Logic-level compatible

• Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm

• Trench MOSFET technology

• ElectroStatic Discharge (ESD) protection > 2 kV HBM

3. Applications

• Relay driver

• High-speed line driver

• Low-side loadswitch

• Switching circuits

4. Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

VDS

drain-source voltage

-

60

V

VGS

gate-source voltage

Tj = 25 °C

-20

-

20

V

VGS = 10 V; Tsp = 25 °C

-

330

mA

ID

drain current

VGS = 10 V; Tamb = 25 °C

[1]

-

260

mA

Static characteristics (per transistor)

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 200 mA; Tj = 25 °C

-

2.2

2.8

Ω

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad

for drain 1 cm2.

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