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PESD5V0X1BCSF Datasheet(PDF) 2 Page - NXP Semiconductors |
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PESD5V0X1BCSF Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 11 page NXP Semiconductors PESD5V0X1BCSF Ultra low capacitance bidirectional ESD protection diode PESD5V0X1BCSF All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 16 June 2015 2 / 11 6. Ordering information Table 3. Ordering information Package Type number Name Description Version PESD5V0X1BCSF DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PESD5V0X1BCSF P 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IPPM rated peak pulse current tp = 8/20 µs [1] - 7 A Tj junction temperature - 150 °C Tamb ambient temperature -40 125 °C Tstg storage temperature -65 150 °C ESD maximum ratings IEC 61000-4-2; contact discharge [2] - 20 kV VESD electrostatic discharge voltage IEC 61000-4-2; air discharge [2] - 20 kV [1] According to IEC 61000-4-5 and IEC 61643-321. [2] Device stressed with ten non-repetitive ESD pulses. |
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