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CHA2193 Datasheet(PDF) 3 Page - United Monolithic Semiconductors |
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CHA2193 Datasheet(HTML) 3 Page - United Monolithic Semiconductors |
3 / 10 page 20-30GHz Low Noise Amplifier CHA2193 Ref. : DSCHA21939042-11 Feb 99 3/10 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 This low noise amplifier can also be used for broadband operation following the relaxed characteristics shown below. Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit Fop Operating frequency range (1) 20 30 GHz G Small signal gain (1) 16 18 dB ∆G Small signal gain flatness (1) ±1 dB Is Reverse isolation (1) 25 30 dB NF Noise figure 2.0 2.5 dB P1dB CW output power at 1dB compression (1) 6 8 dBm VSWRin Input VSWR (1) 2.0:1 3.0:1 VSWRout Output VSWR (1) 2.0:1 3.0:1 Vd DC Voltage 3.5 4 V Id Bias current 60 100 mA (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. |
Similar Part No. - CHA2193_15 |
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Similar Description - CHA2193_15 |
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