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PMEG6010CPAS Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMEG6010CPAS Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page NXP Semiconductors PMEG6010CPAS 60 V, 1 A low VF dual MEGA Schottky barrier rectifier PMEG6010CPAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 20 January 2015 9 / 15 11. Test information time IF IR trr IR(meas) 006aad022 Fig. 13. Reverse recovery definition t1 t2 P t 006aaa812 duty cycle δ = t1 t2 Fig. 14. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. |
Similar Part No. - PMEG6010CPAS_15 |
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Similar Description - PMEG6010CPAS_15 |
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