NXP Semiconductors

PMN70XPEA

20 V, single P-channel Trench MOSFET

PMN70XPEA

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Product data sheet

19 June 2014

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8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

-20

V

gate-source voltage

-12

12

V

[1]

-

-4.1

A

[1]

-

-3.2

A

drain current

[1]

-

-2

A

peak drain current

-

-12.8

A

[2]

-

500

mW

[1]

-

1220

mW

total power dissipation

-

6250

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

[1]

-

-1.3

A

ESD maximum rating

electrostatic discharge voltage HBM

[3]

-

2000

V

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Measured between all pins.