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SPN1032 Datasheet(PDF) 1 Page - SYNC POWER Crop. |
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1 / 8 page SPN1032 N-Channel Enhancement Mode MOSFET 2015/06/18 Ver.1 Page 1 DESCRIPTION APPLICATIONS The SPN1032 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers FEATURES PIN CONFIGURATION( SOT-523 / SC-89-3L ) N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-523 (SC-89-3L) package design PART MARKING |
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