PMZ350UPE_15 datasheet(6/14 Pages) PHILIPS

Part #	PMZ350UPE

Description	20 V, P-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PMZ350UPE

20 V, P-channel Trench MOSFET

PMZ350UPE

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Product data sheet

14 May 2014

6 / 14

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C

-20

-

V

VGSth

gate-source threshold

voltage

ID = -250 µA; VDS = VGS; Tj = 25 °C

-0.45

-0.7

-0.95

V

VDS = -20 V; VGS = 0 V; Tj = 25 °C

-

-1

µA

IDSS

drain leakage current

VDS = -20 V; VGS = 0 V; Tj = 150 °C

-

-10

µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C

-

-10

µA

IGSS

gate leakage current

VGS = 8 V; VDS = 0 V; Tj = 25 °C

-

10

µA

VGS = -4.5 V; ID = -0.3 A; Tj = 25 °C

-

330

450

mΩ

VGS = -4.5 V; ID = -0.3 A; Tj = 150 °C

-

478

645

mΩ

VGS = -2.5 V; ID = -0.2 A; Tj = 25 °C

-

420

645

mΩ

RDSon

drain-source on-state

resistance

VGS = -1.8 V; ID = -0.1 A; Tj = 25 °C

-

520

940

mΩ

gfs

forward

transconductance

VDS = -10 V; ID = -0.3 A; Tj = 25 °C

-

1.4

-

S

Dynamic characteristics

QG(tot)

total gate charge

-

1.3

1.9

nC

QGS

gate-source charge

-

0.2

-

nC

QGD

gate-drain charge

VDS = -10 V; ID = -0.3 A; VGS = -4.5 V;

Tj = 25 °C

-

0.25

-

nC

Ciss

input capacitance

-

127

-

pF

Coss

output capacitance

-

34

-

pF

Crss

reverse transfer

capacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

25

-

pF

td(on)

turn-on delay time

-

4

-

ns

tr

rise time

-

5

-

ns

td(off)

turn-off delay time

-

26

-

ns

tf

fall time

VDS = -10 V; ID = -0.3 A; VGS = -4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

9

-

ns

Source-drain diode

VSD

source-drain voltage

IS = -0.1 A; VGS = 0 V; Tj = 25 °C

-

-0.7

-1.2

V

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