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PMZ390UNE Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMZ390UNE Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page NXP Semiconductors PMZ390UNE 30 V, N-channel Trench MOSFET PMZ390UNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 12 March 2015 9 / 14 QG (nC) 0.00 1.00 0.75 0.25 0.50 aaa-015995 2 3 1 4 5 VGS (V) 0 ID = 0.8 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa137 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 15. MOSFET transistor: Gate charge waveform definitions VSD (V) 0.0 2.0 1.5 0.5 1.0 aaa-015996 2 1 3 4 IS (A) 0 Tj = 25 °C Tj = 150 °C VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information t1 t2 P t 006aaa812 duty cycle δ = t1 t2 Fig. 17. Duty cycle definition |
Similar Part No. - PMZ390UNE_15 |
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Similar Description - PMZ390UNE_15 |
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