NXP Semiconductors

PMZB200UNE

30 V, N-channel Trench MOSFET

PMZB200UNE

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Product data sheet

12 March 2015

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8. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

30

V

gate-source voltage

-8

8

V

[1]

-

1.4

A

drain current

[1]

-

0.9

A

peak drain current

-

5

A

[2]

-

350

mW

[1]

-

760

mW

total power dissipation

-

6250

mW

junction temperature

-55

150

°C

ambient temperature

-55

150

°C

storage temperature

-65

150

°C

Source-drain diode

source current

[1]

-

0.7

A

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

- 75

175

125

25

75

- 25

017aaa123

40

80

120

(%)

0

Fig. 2. Normalized total power dissipation as a

function of junction temperature

- 75

175

125

25

75

- 25

017aaa124

40

80

120

(%)

0

Fig. 3. Normalized continuous drain current as a

function of junction temperature