NXP Semiconductors

PSMN1R4-40YLD

N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using

NextPower-S3 technology

PSMN1R4-40YLD

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Product data sheet

26 August 2014

8 / 13

aaa-013035

0

0.5

1

1.5

2

2.5

3

3.5

4

0

50

100

150

200

250

300

(A)

(A)

175°C

175°C

Fig. 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

aaa-013038

0

60

120

180

240

300

0

2

4

6

8

10

(mΩ)

(mΩ)

2.8 V

2.8 V

3 V

3 V

3.5 V

3.5 V

4.5 V

4.5 V

10 V

10 V

Fig. 10. Drain-source on-state resistance as a function

of drain current; typical values

aaa-013039

-60

-30

0

30

60

90

120 150 180

0

0.4

0.8

1.2

1.6

2

aa

10 V

10 V

Fig. 11. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aaa508

Fig. 12. Gate charge waveform definitions