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PSMN1R4-40YLD Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN1R4-40YLD Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page NXP Semiconductors PSMN1R4-40YLD N-channel 40 V 1.4 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 technology PSMN1R4-40YLD All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 26 August 2014 8 / 13 aaa-013035 0 0.5 1 1.5 2 2.5 3 3.5 4 0 50 100 150 200 250 300 VGS (V) ID ID (A) (A) Tj = 25°C Tj = 25°C 175°C 175°C Fig. 9. Transfer characteristics; drain current as a function of gate-source voltage; typical values aaa-013038 0 60 120 180 240 300 0 2 4 6 8 10 ID (A) RDSon RDSon (mΩ) (mΩ) 2.8 V 2.8 V 3 V 3 V 3.5 V 3.5 V 4.5 V 4.5 V 10 V 10 V Tj = 25 °C Fig. 10. Drain-source on-state resistance as a function of drain current; typical values aaa-013039 -60 -30 0 30 60 90 120 150 180 0 0.4 0.8 1.2 1.6 2 Tj (°C) aa 10 V 10 V VGS = 4.5 V VGS = 4.5 V Fig. 11. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 12. Gate charge waveform definitions |
Similar Part No. - PSMN1R4-40YLD_15 |
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Similar Description - PSMN1R4-40YLD_15 |
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