NXP Semiconductors

PSMN2R5-60PL

N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78

PSMN2R5-60PL

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Product data sheet

27 February 2013

5 / 13

003aaf570

single shot

0.2

0.1

0.05

1

1

(K/W)

= 0.5

0.02

T

P

t

T

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration.

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

60

-

-

V

drain-source

breakdown voltage

54

-

-

V

Fig. 9; Fig. 10

1.4

1.7

2.1

V

Fig. 9

-

-

2.45

V

gate-source threshold

voltage

Fig. 9

0.5

-

-

V

-

0.08

1

µA

drain leakage current

-

-

500

µA

-

2

100

nA

gate leakage current

-

2

100

nA

Fig. 11

-

2

2.6

mΩ

Fig. 11

-

2.3

3.15

mΩ

drain-source on-state

resistance

Fig. 12; Fig. 11

-

-

5.6

mΩ

gate resistance

f = 1 MHz

0.5

1

2

Ω