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BFG25AX Datasheet(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG25AX Datasheet(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
5 / 12 page 1997 Oct 29 5 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFG25A/X Fig.6 Gain as a function of collector current; typical values. VCE = 1 V; f = 500 MHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. handbook, halfpage 30 20 10 0 MCD141 gain (dB) I (mA) C 0 1.0 2.5 0.5 1.5 2.0 MSG GUM Fig.7 Gain as a function of collector current; typical values. VCE = 1 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain. handbook, halfpage 0 1.0 2.5 20 15 5 0 10 MCD142 0.5 1.5 2.0 gain (dB) I (mA) C MSG GUM Fig.8 Gain as a function of frequency; typical values. IC = 0.5 mA; VCE =1V. GUM = maximum unilateral power gain; MSG = maximum stable gain. handbook, halfpage 50 MCD143 10 10 2 10 3 10 4 0 10 20 30 40 gain (dB) f (MHz) GUM MSG Fig.9 Gain as a function of frequency; typical values. IC = 1 mA; VCE =1V. GUM = maximum unilateral power gain; MSG = maximum stable gain. handbook, halfpage 50 MCD144 10 10 2 10 3 10 4 0 10 20 30 40 gain (dB) f (MHz) GUM MSG |
Similar Part No. - BFG25AX_15 |
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Similar Description - BFG25AX_15 |
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