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PSMN6R0-30YLD Datasheet(PDF) 7 Page - NXP Semiconductors

Part # PSMN6R0-30YLD
Description  N-channel 30 V, 6.0 m廓 logic level MOSFET in LFPAK56 using NextPowerS3 Technology
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN6R0-30YLD Datasheet(HTML) 7 Page - NXP Semiconductors

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NXP Semiconductors
PSMN6R0-30YLD
N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
PSMN6R0-30YLD
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
10 February 2014
7 / 13
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Qoss
output charge
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
-
11.5
-
nC
Source-drain diode
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
0.81
1.2
V
trr
reverse recovery time
-
23.4
-
ns
Qr
recovered charge
[1]
-
12.6
-
nC
ta
reverse recovery rise
time
-
10.6
-
ns
tb
reverse recovery fall
time
-
12.8
-
ns
S
softness factor
IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 15 V; Fig. 16
-
1.2
-
[1] includes capacitive recovery
003aal099
0
0.25
0.5
0.75
1
0
12
24
36
48
60
VDS (V)
ID
ID
(A)
(A)
2.6 V
2.6 V
2.8 V
2.8 V
VGS = 3 V
VGS = 3 V
3.5 V
3.5 V
4.5 V
4.5 V
10 V
10 V
Fig. 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aal100
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
VGS (V)
RDSon
RDSon
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values


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