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PSMN6R3-120PS Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PSMN6R3-120PS
Description  N-channel 120 V 6.7 m廓 standard level MOSFET in TO-220
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN6R3-120PS Datasheet(HTML) 5 Page - NXP Semiconductors

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NXP Semiconductors
PSMN6R3-120PS
N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220
PSMN6R3-120PS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
7 June 2013
5 / 12
9. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C
120
-
-
V
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
108
-
-
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
2
3
4
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11
1
-
-
V
VGS(th)
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10; Fig. 11
-
-
4.6
V
VDS = 120 V; VGS = 0 V; Tj = 25 °C
-
0.1
1
µA
IDSS
drain leakage current
VDS = 120 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
IGSS
gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
10
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
4
5.7
6.7
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12
-
16.5
19.4
RG
internal gate
resistance (AC)
f = 1 MHz
0.44
0.88
1.76
Ω
Dynamic characteristics
QG(tot)
total gate charge
-
207.1 -
nC
QGS
gate-source charge
-
43.2
-
nC
QGS(th)
pre-threshold gate-
source charge
-
29.8
-
nC
QGS(th-pl)
post-threshold gate-
source charge
-
13.4
-
nC
QGD
gate-drain charge
ID = 25 A; VDS = 60 V; VGS = 10 V;
Fig. 14; Fig. 15
-
61.9
-
nC
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 60 V; Fig. 14; Fig. 15
-
4.3
-
V
Ciss
input capacitance
-
11384 -
pF
Coss
output capacitance
-
534
-
pF
Crss
reverse transfer
capacitance
VDS = 60 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
358
-
pF
td(on)
turn-on delay time
-
42.1
-
ns
tr
rise time
VDS = 60 V; RL = 2.4 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
58.2
-
ns


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