PMZ290UNE_15 datasheet(6/14 Pages) PHILIPS

Part #	PMZ290UNE

Description	20 V, N-channel Trench MOSFET

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Manufacturer	PHILIPS [NXP Semiconductors]

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NXP Semiconductors

PMZ290UNE

20 V, N-channel Trench MOSFET

PMZ290UNE

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Product data sheet

14 May 2014

6 / 14

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

20

-

V

VGSth

gate-source threshold

voltage

ID = 250 µA; VDS = VGS; Tj = 25 °C

0.5

0.75

0.95

V

VDS = 20 V; VGS = 0 V; Tj = 25 °C

-

1

µA

IDSS

drain leakage current

VDS = 20 V; VGS = 0 V; Tj = 150 °C

-

10

µA

VGS = 8 V; VDS = 0 V; Tj = 25 °C

-

2

µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C

-

2

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

-

500

nA

IGSS

gate leakage current

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-

500

nA

VGS = 4.5 V; ID = 500 mA; Tj = 25 °C

-

290

380

mΩ

VGS = 4.5 V; ID = 500 mA; Tj = 150 °C

-

460

610

mΩ

VGS = 2.5 V; ID = 400 mA; Tj = 25 °C

-

420

620

mΩ

RDSon

drain-source on-state

resistance

VGS = 1.8 V; ID = 100 mA; Tj = 25 °C

-

600

1100

mΩ

gfs

forward

transconductance

VDS = 10 V; ID = 200 mA; Tj = 25 °C

-

1.6

-

S

Dynamic characteristics

QG(tot)

total gate charge

-

0.45

0.68

nC

QGS

gate-source charge

-

0.15

-

nC

QGD

gate-drain charge

VDS = 10 V; ID = 500 mA; VGS = 4.5 V;

Tj = 25 °C

-

0.15

-

nC

Ciss

input capacitance

-

55

83

pF

Coss

output capacitance

-

15

-

pF

Crss

reverse transfer

capacitance

VDS = 10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

7

-

pF

td(on)

turn-on delay time

-

6

12

ns

tr

rise time

-

4

-

ns

td(off)

turn-off delay time

-

86

172

ns

tf

fall time

VDS = 10 V; RL = 250 Ω; VGS = 4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

31

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 300 mA; VGS = 0 V; Tj = 25 °C

0.48

0.77

1.2

V

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