15-30GHz Frequency Multiplier

CHX3068-QDG

Ref. DSCHX3068-QDG1061 - 02 Mar 11

3/8

Specifications subject to change without notice

Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

Device thermal performances:

All the figures given in this section are obtained assuming that the QFN device is cooled

down only by conduction through the package thermal pad (no convection mode

considered).

The temperature is monitored at the package back-side interface (Tcase) as shown below.

The system maximum temperature must be adjusted in order to guarantee that Tcase

remains below than the maximum value specified in the next table. So, the system PCB must

be designed to comply with this requirement.

A derating must be applied on the dissipated power if the case temperature (Tcase) can not

be maintained below the maximum temperature specified in order to guarantee the nominal

device life time (MTTF) (see the curve Pdiss. Max).

Recommended max. junction temperature (Tj max)

:

155 °C

Junction temperature absolute maximum rating

:

175 °C

Max. continuous dissipated power (Pdiss. Max.)

:

1.1 W

=> Pdiss. Max. derating above Tcase

°C :

15 mW/°C

Junction-Case thermal resistance (Rth J-C)

(2)

:

<65 °C/W

Minimum Tcase operating temperature

(3)

:

-40 °C

Maximum Tcase operating temperature

(3)

:

85 °C

Minimum storage temperature

:

-55 °C

Maximum storage temperature

:

150 °C

(1) Derating at junctio n temperature co nstant = Tj max

(2) Rth J-C is calculated fo r a wo rst case where the ho t t e s t junc t io n

o f the M M IC is co nsidered.

(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).

6.0

DEVICE THERMAL SPECIFICATION : CHX3068-QDG

0

0.2

0.4

0.6

0.8

1

1.2

-50

-25

0

25

50

75

100

125

150

175

Tcase (°C)

Pdiss. Max. @Tj <Tj max (W)

Tcase

Example: QFN 16L 3x3

Location of temeprature

reference point (Tcase)

on package's bottom side