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BFG94 Datasheet(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG94 Datasheet(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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4 / 13 page  September 1995 4 Philips Semiconductors Product specification NPN 6 GHz wideband transistor BFG94 CHARACTERISTICS Tj = 25 °C unless otherwise specified. Notes 1. GUM is the maximum unilateral power gain, assuming S12 is zero and 2. dim = −60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vp = VO at dim = −60 dB; fp = 795.25 MHz; Vq = VO −6 dB; Vr = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz; measured at f(p+q−r) = 793.25 MHz. 3. IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C; Vq = VO = 280 mV; fp = 250 MHz; fq = 560 MHz; measured at f(p+q) = 810 MHz. 4. IC = 45 mA; VCE = 10 V; RL = 50 Ω;Tamb = 25 °C; fp = 1000 MHz; fq = 1001 MHz; measured at f(2p−q) and f(2q−p). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 10 V −− 100 nA hFE DC current gain IC = 30 mA; VCE = 5 V 45 90 − IC = 45 mA; VCE = 10 V − 100 − Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 0.9 2 pF Ce emitter capacitance IC = ie = 0; VEB = 0.5 V; f = 1 MHz − 2.9 4.5 pF Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz − 0.5 0.8 pF fT transition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C 4 −− GHz IC = 30 mA; VCE = 5 V; f = 1 GHz; Tamb = 25 °C 46 − GHz GUM maximum unilateral power gain (note1) IC = 45 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C 11.5 13.5 − dB F minimum noise figure Γ s = Γopt; IC = 45 mA; VCE = 10 V; f = 500 MHz − 2.7 − dB Γs = Γopt; IC = 45 mA; VCE = 10 V; f = 1 GHz − 3 − dB VO output voltage note 2 − 500 − mV d2 second order intermodulation distortion note 3 −−51 − dB PL1 output power at 1 dB gain compression IC = 45 mA; VCE = 10 V; RL = 50 Ω; Tamb = 25 °C; measured at f = 1 GHz − 21.5 − dBm ITO third order intercept point note 4 − 34 − dBm G UM 10 S 21 2 1S 11 2 – 1S 22 2 – -------------------------------------------------------------- dB. log = |
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