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BFG198 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG198 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 12 page  1995 Sep 12 2 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFG198 DESCRIPTION NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. age 4 123 MSB002 - 1 Top view QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 10 V IC DC collector current −− 100 mA Ptot total power dissipation up to Ts = 135 °C (note 1) −− 1W hFE DC current gain IC = 50 mA; VCE =5V; Tj =25 °C40 90 − fT transition frequency IC = 50 mA; VCE = 8 V; f = 1 GHz; Tamb =25 °C − 8 − GHz GUM maximum unilateral power gain IC = 50 mA; VCE = 8 V; f = 500 MHz; Tamb =25 °C − 18 − dB IC = 50 mA; VCE = 8 V; f = 800 MHz; Tamb =25 °C − 15 − dB Vo output voltage dim = −60 dB; IC = 70 mA; VCE =8V; RL =75 Ω; Tamb =25 °C; f(p+q−r) = 793.25 MHz − 700 − mV SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 100 mA Ptot total power dissipation up to Ts = 135 °C (note 1) − 1W Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C |
Similar Part No. - BFG198_15 |
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Similar Description - BFG198_15 |
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