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BFG591 Datasheet(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFG591 Datasheet(HTML) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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6 / 12 page  1995 Sep 04 6 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 f = 900 MHz; VCE =12V. Fig.6 Gain as a function of collector current; typical values. handbook, halfpage 040 80 Gmax I C (mA) 120 25 gain (dB) 0 20 MGC795 15 10 5 GUM f = 2 GHz; VCE =12V. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 040 80 Gmax GUM I C (mA) 120 10 gain (dB) 0 8 MGC794 6 4 2 IC = 70 mA; VCE =12V. Fig.8 Gain as a function of frequency; typical values. handbook, halfpage 50 0 10 MGC796 10 2 10 3 10 4 10 20 30 40 gain (dB) f (MHz) G UM G max MSG |
Similar Part No. - BFG591_15 |
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Similar Description - BFG591_15 |
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