PMV65XPEA_15 datasheet(7/16 Pages) PHILIPS

Part #	PMV65XPEA

Description	20 V, P-channel Trench MOSFET

Download	16 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

7 / 16 page

NXP Semiconductors

PMV65XPEA

20 V, P-channel Trench MOSFET

PMV65XPEA

All information provided in this document is subject to legal disclaimers.

Product data sheet

27 November 2014

7 / 16

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C

-20

-

V

VGSth

gate-source threshold

voltage

ID = -250 µA; VDS = VGS; Tj = 25 °C

-0.75

-1

-1.25

V

IDSS

drain leakage current

VDS = -20 V; VGS = 0 V; Tj = 25 °C

-

-1

µA

VGS = 12 V; VDS = 0 V; Tj = 25 °C

-

10

µA

VGS = -12 V; VDS = 0 V; Tj = 25 °C

-

-10

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

-

2

µA

IGSS

gate leakage current

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-

-2

µA

VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C

-

67

78

mΩ

VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C

-

98

114

mΩ

RDSon

drain-source on-state

resistance

VGS = -2.5 V; ID = -2.2 A; Tj = 25 °C

-

99

125

mΩ

gfs

forward

transconductance

VDS = -10 V; ID = -2 A; Tj = 25 °C

-

7.4

-

S

RG

gate resistance

f = 1 MHz

-

11.6

-

Ω

Dynamic characteristics

QG(tot)

total gate charge

-

5

9

nC

QGS

gate-source charge

-

1.1

-

nC

QGD

gate-drain charge

VDS = -10 V; ID = -2.8 A; VGS = -4.5 V;

Tj = 25 °C

-

1.1

-

nC

Ciss

input capacitance

-

618

-

pF

Coss

output capacitance

-

80

-

pF

Crss

reverse transfer

capacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

58

-

pF

td(on)

turn-on delay time

-

7

-

ns

tr

rise time

-

19

-

ns

td(off)

turn-off delay time

-

36

-

ns

tf

fall time

VDS = -10 V; ID = -2.8 A; VGS = -4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

17

-

ns

Source-drain diode

VSD

source-drain voltage

IS = -0.85 A; VGS = 0 V; Tj = 25 °C

-

-0.75

-1.2

V

Similar Part No. - PMV65XPEA_15

Manufacturer	Part #	Datasheet	Description
Nexperia B.V. All right...	PMV65XPEA	710Kb / 16P	20 V, P-channel Trench MOSFET

More results

Similar Description - PMV65XPEA_15

Manufacturer	Part #	Datasheet	Description
Nexperia B.V. All right...	PMPB100XPEA	327Kb / 15P	20 V, P-channel Trench MOSFET
	PMV30XPEA	722Kb / 16P	20 V, P-channel Trench MOSFET
	PMN52XP	724Kb / 16P	20 V, P-channel Trench MOSFET
	PMV65XPE	708Kb / 15P	20 V, P-channel Trench MOSFET 25 April 2014
	PMZ350UPE	701Kb / 14P	20 V, P-channel Trench MOSFET
NXP Semiconductors	PMV75UP	279Kb / 15P	20 V, P-channel Trench MOSFET 25 April 2014
	PMZ950UPE	237Kb / 15P	20 V, P-channel Trench MOSFET 10 July 2014
	PMV48XPA	257Kb / 15P	20 V, P-channel Trench MOSFET 10 March 2014
Nexperia B.V. All right...	BSH205G2A	277Kb / 15P	20 V, P-channel Trench MOSFET 13 October 2020
Nexperia B.V. All right...	PMN40XPEA	286Kb / 15P	20 V, P-channel Trench MOSFET 7 July 2020

More results

PMV65XPEA Datasheet(PDF) 7 Page - NXP Semiconductors

PMV65XPEA Datasheet(HTML) 7 Page - NXP Semiconductors

Similar Part No. - PMV65XPEA_15

Similar Description - PMV65XPEA_15

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL