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IGCM06F60HA Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IGCM06F60HA Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 16 page  CIPOS™ IGCM06F60HA Datasheet 6 Ver. 1.6, 2014-06-01 It is recommended for proper work of CIPOS™ not to provide input pulse-width lower than 1us. The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3). When two inputs of a same leg are activated, only former activated one is activated so that the leg is kept steadily in a safe state. A minimum deadtime insertion of typically 380ns is also provided by driver IC, in order to reduce cross- conduction of the external power switches. VFO (Fault-output, Pin 14) The VFO pin indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. Figure 5: Internal circuit at pin VFO ITRIP (Over current detection function, Pin 15) CIPOS™ provides an over current detection function by connecting the ITRIP input with the motor current feedback. The ITRIP comparator threshold (typ. 0.47V) is referenced to VSS ground. An input noise filter (typ: tITRIPMIN = 530ns) prevents the driver to detect false over-current events. Over current detection generates a shut down of all outputs of the gate driver after the shutdown propagation delay of typically 1000ns. The fault-clear time is set to typical 65us. VDD, VSS (Low side control supply and reference, Pin 13, 16) VDD is the low side supply and it provides power both to input logic and to low side output power stage. Input logic is referenced to VSS ground. The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1V is present. The IC shuts down all the gate drivers’ power outputs, when the VDD supply voltage is below VDDUV- = 10.4V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1 - 6) VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter voltage. Due to the low power consumption, the floating driver stage is supplied by integrated bootstrap circuit. The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 12.1V and a falling threshold of VBSUV- = 10.4V. VS(U,V,W) provide a high robustness against negative voltage in respect of VSS of -50V transiently. This ensures very stable designs even under rough conditions. NW, NV, NU (Low side emitter, Pin 17 - 19) The low side emitters are available for current measurements of each phase leg. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. W, V, U (High side emitter and low side collector, Pin 20 - 22) These pins are motor U, V, W input pins P (Positive bus input voltage, Pin 23) The high side IGBT are connected to the bus voltage. It is noted that the bus voltage does not exceed 450 V. VFO CIPOS™ VSS >1 from uv -detection VDD RON,FLT from ITRIP -Latch |
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