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PSMN8R5-100PS Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN8R5-100PS Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page NXP Semiconductors PSMN8R5-100PS N-channel 100 V 8.5 mΩ standard level MOSFET in TO220 PSMN8R5-100PS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 17 October 2013 8 / 14 003aah027 0 1 2 3 4 5 -60 0 60 120 180 Tj (°C) VGS(th) (V) max typ min Fig. 10. Gate-source threshold voltage as a function of junction temperature 003aah028 10-6 10-5 10-4 10-3 10-2 10-1 0 2 4 6 VGS(V) ID (A) max typ min Fig. 11. Sub-threshold drain current as a function of gate-source voltage 003aag818 0 0.6 1.2 1.8 2.4 3 -60 0 60 120 180 Tj (°C) a Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aak422 0 5 10 15 20 25 0 80 160 240 ID(A) RDSon (mΩ) VGS(V) = 10 5 4.5 5.5 6 Fig. 13. Drain-source on-state resistance as a function of drain current; typical values |
Similar Part No. - PSMN8R5-100PS_15 |
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Similar Description - PSMN8R5-100PS_15 |
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