IKW30N65ES5_15 datasheet(6/16 Pages) INFINEON

Part #	IKW30N65ES5

Description	high Speed soft switching IGBT with full current rated RAPID 1 diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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6

IKW30N65ES5

TRENCHSTOPTM5softswitchingIGBT

Rev.2.1,2015-09-22

Turn-on delay time

td(on)

-

16

-

ns

Rise time

tr

-

6

-

ns

Turn-off delay time

td(off)

-

133

-

ns

Fall time

tf

-

33

-

ns

Turn-on energy

Eon

-

0.26

-

mJ

Turn-off energy

Eoff

-

0.17

-

mJ

Total switching energy

Ets

-

0.43

-

mJ

Tvj=25°C,

VCC=400V,IC=15.0A,

VGE=0.0/15.0V,

RG(on)=13.0

Ω,RG(off)=13.0Ω,

L

σ=30nH,Cσ=30pF

L

σ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time

trr

-

75

-

ns

Diode reverse recovery charge

Qrr

-

0.83

-

µC

Diode peak reverse recovery current

Irrm

-

18.0

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

-900

-

A/µs

Tvj=25°C,

VR=400V,

IF=30.0A,

diF/dt=1200A/µs

Diode reverse recovery time

trr

-

52

-

ns

Diode reverse recovery charge

Qrr

-

0.60

-

µC

Diode peak reverse recovery current

Irrm

-

18.5

-

A

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

-

-1315

-

A/µs

Tvj=25°C,

VR=400V,

IF=15.0A,

diF/dt=1900A/µs

SwitchingCharacteristic,InductiveLoad

Value

min.

typ.

max.

Parameter

Symbol Conditions

Unit

IGBTCharacteristic,atTvj=150°C

Turn-on delay time

td(on)

-

17

-

ns

Rise time

tr

-

13

-

ns

Turn-off delay time

td(off)

-

149

-

ns

Fall time

tf

-

55

-

ns

Turn-on energy

Eon

-

0.77

-

mJ

Turn-off energy

Eoff

-

0.56

-

mJ

Total switching energy

Ets

-

1.33

-

mJ

Tvj=150°C,

VCC=400V,IC=30.0A,

VGE=0.0/15.0V,

RG(on)=13.0

Ω,RG(off)=13.0Ω,

L

σ=30nH,Cσ=30pF

L

σ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Turn-on delay time

td(on)

-

16

-

ns

Rise time

tr

-

7

-

ns

Turn-off delay time

td(off)

-

179

-

ns

Fall time

tf

-

54

-

ns

Turn-on energy

Eon

-

0.41

-

mJ

Turn-off energy

Eoff

-

0.31

-

mJ

Total switching energy

Ets

-

0.72

-

mJ

Tvj=150°C,

VCC=400V,IC=15.0A,

VGE=0.0/15.0V,

RG(on)=13.0

Ω,RG(off)=13.0Ω,

L

σ=30nH,Cσ=30pF

L

σ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

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IKW30N65ES5 Datasheet(PDF) 6 Page - Infineon Technologies AG

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