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IKW30N65ES5 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # IKW30N65ES5
Description  high Speed soft switching IGBT with full current rated RAPID 1 diode
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IKW30N65ES5 Datasheet(HTML) 5 Page - Infineon Technologies AG

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5
IKW30N65ES5
TRENCHSTOPTM5softswitchingIGBT
Rev.2.1,2015-09-22
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
StaticCharacteristic
Collector-emitter breakdown voltage
V(BR)CES VGE=0V,IC=0.20mA
650
-
-
V
Collector-emitter saturation voltage
VCEsat
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.35
1.50
1.60
1.70
-
-
V
Diode forward voltage
VF
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.45
1.42
1.39
1.70
-
-
V
Gate-emitter threshold voltage
VGE(th)
IC=0.30mA,VCE=VGE
3.2
4.0
4.8
V
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
1400
50
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=30.0A
-
42.0
-
S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
DynamicCharacteristic
Input capacitance
Cies
-
1800
-
Output capacitance
Coes
-
55
-
Reverse transfer capacitance
Cres
-
7
-
VCE=25V,VGE=0V,f=1MHz
pF
Gate charge
QG
VCC=520V,IC=30.0A,
VGE=15V
-
70.0
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
-
13.0
-
nH
SwitchingCharacteristic,InductiveLoad
Value
min.
typ.
max.
Parameter
Symbol Conditions
Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
-
17
-
ns
Rise time
tr
-
12
-
ns
Turn-off delay time
td(off)
-
124
-
ns
Fall time
tf
-
30
-
ns
Turn-on energy
Eon
-
0.56
-
mJ
Turn-off energy
Eoff
-
0.32
-
mJ
Total switching energy
Ets
-
0.88
-
mJ
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=13.0
Ω,RG(off)=13.0Ω,
L
σ=30nH,Cσ=30pF
L
σ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.


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