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PMPB40SNA Datasheet(PDF) 9 Page - NXP Semiconductors |
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PMPB40SNA Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page NXP Semiconductors PMPB40SNA 60 V N-channel Trench MOSFET PMPB40SNA All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 9 / 15 aaa-005321 VDS (V) 0.0 1.2 0.8 0.4 8 12 4 16 20 IS (A) 0 Tj = 25 °C Tj = 150 °C VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information t1 t2 P t 006aaa812 duty cycle δ = t1 t2 Fig. 17. Duty cycle definition 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. |
Similar Part No. - PMPB40SNA_15 |
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Similar Description - PMPB40SNA_15 |
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