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BFS540 Datasheet(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BFS540 Datasheet(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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5 / 12 page  2000 May 30 5 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS540 In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage MRC007 0 4 8 12 16 20 0 10203040 50 I (mA) C GUM (dB) 4 V V = 8 V CE Fig.6 Maximum unilateral power gain as a function of collector current. f = 900 MHz; Tamb =25 °C. Fig.7 Gain as a function of collector current. VCE = 8 V; f = 2 GHz; Tamb =25 °C. handbook, halfpage MRC006 0 5 10 15 0 204060 I (mA) C GUM Gmax gain (dB) Fig.8 Gain as a function of frequency. IC = 10 mA; VCE = 8 V; Tamb =25 °C. handbook, halfpage MRC004 0 10 20 30 40 50 10−1 10−2 110 f (GHz) MSG gain (dB) GUM Gmax Fig.9 Gain as a function of frequency. IC = 40 mA; VCE = 8 V; Tamb =25 °C. handbook, halfpage MRC005 0 10 20 30 40 50 10−1 10−2 110 f (GHz) MSG GUM Gmax gain (dB) |
Similar Part No. - BFS540_15 |
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Similar Description - BFS540_15 |
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