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PMC85XP Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMC85XP Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 15 page NXP Semiconductors PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor PMC85XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 15 May 2013 5 / 15 Symbol Parameter Conditions Min Typ Max Unit Rth(j-sp) thermal resistance from junction to solder point - 10 15 K/W NPN RET [1] - 233 270 K/W Rth(j-a) thermal resistance from junction to ambient in free air [2] - 110 127 K/W Rth(j-sp) thermal resistance from junction to solder point - 25 30 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2 017aaa398 10 1 102 103 Zth(j-a) (K/W) 10-1 10-5 10 10-2 10-4 102 10-1 tp (s) 10-3 103 1 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 FR4 PCB, standard footprint Fig. 4. P-channel Trench MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values |
Similar Part No. - PMC85XP_15 |
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Similar Description - PMC85XP_15 |
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