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PSMN2R6-60PS Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN2R6-60PS Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page NXP Semiconductors PSMN2R6-60PS N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 PSMN2R6-60PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 5 February 2013 8 / 13 003aag814 0 0.6 1.2 1.8 2.4 -60 0 60 120 180 Tj (°C) a Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 13. Gate charge waveform definitions 003aah672 0 2 4 6 8 10 0 50 100 150 QG(nC) VGS (V) VDS= 48V 14 V Fig. 14. Gate-source voltage as a function of gate charge; typical values 003aah673 102 103 104 10-1 1 10 102 VDS(V) C (pF) Ciss Crss Coss Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values |
Similar Part No. - PSMN2R6-60PS_15 |
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Similar Description - PSMN2R6-60PS_15 |
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