LM5001, LM5001-Q1

SNVS484H – JANUARY 2007 – REVISED JULY 2015

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6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VIN to GND

76

V

SW to GND (Steady State)

–0.3

76

V

VCC, EN to GND

14

V

COMP, FB, RT to GND

–0.3

7

V

Maximum Junction Temperature

150

°C

-65

150

°C

6.2 ESD Ratings

VALUE

UNIT

±2000

Electrostatic discharge

V

Charged-device model (CDM), per AEC Q100-011

±750

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

VIN

3.1

75

V

Operating Junction Temperature

−40

125

°C

6.4 Thermal Information

LM5001-Q1

LM5001

THERMAL METRIC

SOIC

SOIC

WSON

UNIT

(8 PINS)

Junction-to-ambient thermal resistance

140

140

40

°C/W

Junction-to-case (top) thermal resistance

32

32

4.5

6.5 Electrical Characteristics

SYMBOL

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Startup Regulator

VCC Regulator Output

6.55

6.85

7.15

V

VCC Current Limit

15

20

mA

VCC UVLO Threshold

2.6

2.8

3

V

VCC Undervoltage Hysteresis

0.1

3.1

4.5

mA

95

130

µA

(1)

Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation

using Statistical Quality Control (SQC) methods. Limits are used to calculate TI’s Average Outgoing Quality Level (AOQL).

4

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