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BUK7Y113-100E Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7Y113-100E Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page NXP Semiconductors BUK7Y113-100E N-channel 100 V, 113 mΩ standard level MOSFET in LFPAK56 BUK7Y113-100E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 8 May 2013 3 / 13 Symbol Parameter Conditions Min Max Unit Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb = 25 °C - 12 A ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 48 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 12 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped; Fig. 3 [1][2] - 13.4 mJ [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C. [2] Refer to application note AN10273 for further information. 003aai325 0 4 8 12 16 0 50 100 150 200 Tmb(°C) ID (A) Fig. 1. Continuous drain current as a function of mounting base temperature Tmb (°C) 0 200 150 50 100 03aa16 40 80 120 Pder (%) 0 Fig. 2. Normalized total power dissipation as a function of mounting base temperature |
Similar Part No. - BUK7Y113-100E_15 |
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Similar Description - BUK7Y113-100E_15 |
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